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Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications.
- Source :
- Advanced Electronic Materials; Feb2022, Vol. 8 Issue 2, p1-8, 8p
- Publication Year :
- 2022
-
Abstract
- 2D materials have been of considerable interest as new materials for device applications. Non‐volatile resistive switching applications of MoS2 and WS2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large‐area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one‐step sulfurization method to synthesize MoS2 and WS2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO2/Si substrates is achieved. Following this, MoS2 and WS2 memristors are fabricated that exhibit stable non‐volatile switching and a satisfactory large on/off current ratio (103–105) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. The demonstration of large‐scale MoS2 and WS2 memristors with a one‐step low‐temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN film devices
SAPPHIRES
MEMRISTORS
THIN films
HIGH temperatures
Subjects
Details
- Language :
- English
- ISSN :
- 2199160X
- Volume :
- 8
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Advanced Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 155218409
- Full Text :
- https://doi.org/10.1002/aelm.202100515