Back to Search
Start Over
Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.
- Source :
- Materials (1996-1944); Feb2022, Vol. 15 Issue 3, p877, 1p
- Publication Year :
- 2022
-
Abstract
- Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO<subscript>2</subscript> films. The HfO<subscript>2</subscript> reference films crystallized in the stable monoclinic phase of HfO<subscript>2</subscript>. Mixing HfO<subscript>2</subscript> and PrO<subscript>x</subscript> resulted in the growth of nanocrystalline metastable tetragonal HfO<subscript>2</subscript>. The highest relative permittivities reaching 37–40 were measured for the films with tetragonal structures that were grown using HfO<subscript>2</subscript>:PrO<subscript>x</subscript> cycle ratio of 5:1 and possessed Pr/(Pr + Hf) atomic ratios of 0.09–0.10. All the HfO<subscript>2</subscript>:PrO<subscript>x</subscript> films exhibited resistive switching behavior. Lower commutation voltages and current values, promising in terms of reduced power consumption, were achieved for the films grown with HfO<subscript>2</subscript>:PrO<subscript>x</subscript> cycle ratios of 3:1 and 2:1 and showing Pr/(Pr + Hf) atomic ratios of 0.16–0.23. Differently from the undoped HfO<subscript>2</subscript> films, the Pr-doped films showed low variability of resistance state currents and stable endurance behavior, extending over 10<superscript>4</superscript> switching cycles. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 15
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 155266909
- Full Text :
- https://doi.org/10.3390/ma15030877