Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors.

MLA

Legallais, Maxime, et al. “Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors.” Advanced Materials Interfaces, vol. 9, no. 5, Feb. 2022, pp. 1–7. EBSCOhost, https://doi.org/10.1002/admi.202101731.

APA

Legallais, M., Lefevre, G., Martin, S., Labau, S., Bassani, F., Pélissier, B., Baron, T., Vauche, L., Le Royer, C., Charles, M., Vandendaele, W., Plissonnier, M., Gwoziecki, R., & Salem, B. (2022). Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Advanced Materials Interfaces, 9(5), 1–7. https://doi.org/10.1002/admi.202101731

Chicago

Legallais, Maxime, Gauthier Lefevre, Simon Martin, Sébastien Labau, Franck Bassani, Bernard Pélissier, Thierry Baron, et al. 2022. “Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors.” Advanced Materials Interfaces 9 (5): 1–7. doi:10.1002/admi.202101731.