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Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter.
- Source :
- Journal of Applied Physics; 2/21/2022, Vol. 131 Issue 7, p1-7, 7p
- Publication Year :
- 2022
-
Abstract
- The trivalent terbium ion (Tb<superscript>3+</superscript>) emits ultra-stable visible light consisting of blue, green, yellow, and red. Tb-doped semiconductors are candidates for novel full-color light sources in next-generation displays. Particularly, Tb-doped Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N (Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N:Tb) has attracted much attention for device applications. We present the luminescence properties of Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N:Tb grown by the organometallic vapor phase epitaxy. At 15 K, emission related to the <superscript>5</superscript>D<subscript>4</subscript>–<superscript>7</superscript>F<subscript>J</subscript> (J = 3, 4, 5, 6) transitions is observed for Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N:Tb with x ≥ 0.03. Thermal quenching of emission originating from the <superscript>5</superscript>D<subscript>4</subscript>–<superscript>7</superscript>F<subscript>J</subscript> transition is suppressed for higher Al compositions, and the luminescence is clearly observed at room temperature for Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N:Tb with x ≥ 0.06. The small thermal quenching is attributed to the enhanced excitation to the <superscript>5</superscript>D<subscript>4</subscript> level of Tb<superscript>3+</superscript> ions via the 4f–5d transition and not due to the suppression of energy back-transfer paths in excited Tb<superscript>3+</superscript> ions. Although additional emission originating from the <superscript>5</superscript>D<subscript>3</subscript>–<superscript>7</superscript>F<subscript>J</subscript> transitions is observed at 15 K for Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N:Tb with x ≥ 0.15, it is not observed at room temperature because the excitation to the <superscript>5</superscript>D<subscript>3</subscript> level via the 4f–5d transition is less efficient at high temperature. For Al<subscript>0.15</subscript>Ga<subscript>0.85</subscript>N:Tb, monochromatic green light is demonstrated using a SiO<subscript>2</subscript>/ZrO<subscript>2</subscript> distributed Bragg reflector. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 131
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 155336217
- Full Text :
- https://doi.org/10.1063/5.0080269