Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties.

MLA

Wang, Zhenwei, et al. “Fabrication of N-Si/n-Ga2O3 Heterojunctions by Surface-Activated Bonding and Their Electrical Properties.” Journal of Applied Physics, vol. 131, no. 7, Feb. 2022, pp. 1–9. EBSCOhost, https://doi.org/10.1063/5.0080734.

APA

Wang, Z., Takatsuki, D., Liang, J., Kitada, T., Shigekawa, N., & Higashiwaki, M. (2022). Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties. Journal of Applied Physics, 131(7), 1–9. https://doi.org/10.1063/5.0080734

Chicago

Wang, Zhenwei, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki. 2022. “Fabrication of N-Si/n-Ga2O3 Heterojunctions by Surface-Activated Bonding and Their Electrical Properties.” Journal of Applied Physics 131 (7): 1–9. doi:10.1063/5.0080734.