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Influence of R2+ (R = Mg, Ca, Sr) partial substitution for Ba2+ on structures and the thermal properties of BaO–Al2O3–SiO2–B2O3 LTCC materials.
- Source :
- Journal of Materials Science: Materials in Electronics; Feb2022, Vol. 33 Issue 6, p3198-3207, 10p
- Publication Year :
- 2022
-
Abstract
- A combination of dielectric and thermal properties is the prime factor for developing glass–ceramics for practical aspects in low-temperature co-fired ceramic technology. In this work, we report the low melting-point compositions of BaO–Al<subscript>2</subscript>O<subscript>3</subscript>–SiO<subscript>2</subscript>–B<subscript>2</subscript>O<subscript>3</subscript> and BaAl<subscript>2</subscript>Si<subscript>2</subscript>O<subscript>8</subscript> ceramics at 900 °C. The phase evolutions, microstructure, dielectric, and thermal expansion properties corresponding to the partial replacement of Ba<superscript>2+</superscript> with alkaline earth metal ions R<superscript>2+</superscript>, i.e., Sr<superscript>2+</superscript>, Ca<superscript>2+</superscript>, and Mg<superscript>2+</superscript> were investigated. The results indicated that, because the lattice distortion of hexacelsian structure was caused by solid solutions of substitution ions to BaAl<subscript>2</subscript>Si<subscript>2</subscript>O<subscript>8</subscript> ceramics, the phase transition of hexacelsian can be gradually inhabited with the decrease of the substitution ion radius. Notably, the partial substitution of Mg<superscript>2+</superscript> in the Ba<superscript>2+</superscript> can completely inhibit the phase transition and promote the formation of orthorhombic celsian. By the substitution of 40 mol% of Ba<superscript>2+</superscript> to Mg<superscript>2+</superscript>, physical properties, i.e., density of 2.22 g⋅cm<superscript>−3</superscript>, ε<subscript>r</subscript> of 4.08 at 12 GHz, and tanδ of 2.7 × 10<superscript>−3</superscript>, are obtained. Importantly, the coefficient of thermal expansion (CTE) of 4.02 × 10<superscript>−6</superscript>/°C close to that of monocrystalline silicon is also successfully achieved. The new BaAl<subscript>2</subscript>Si<subscript>2</subscript>O<subscript>8</subscript> ceramics with low CTE and reliable thermal stability demonstrated the potential for application in chip packaging. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 33
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 155343461
- Full Text :
- https://doi.org/10.1007/s10854-021-07521-x