Cite
Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber.
MLA
Zhang, Xu, et al. “Controllable Epitaxy of Quasi-One-Dimensional Topological Insulator α-Bi4Br4 for the Application of Saturable Absorber.” Applied Physics Letters, vol. 120, no. 9, Feb. 2022, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0083807.
APA
Zhang, X., Xing, X., Li, J., Peng, X., Qiao, L., Liu, Y., Xiong, X., Han, J., Liu, W., Xiao, W., & Yao, Y. (2022). Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber. Applied Physics Letters, 120(9), 1–6. https://doi.org/10.1063/5.0083807
Chicago
Zhang, Xu, Xiaowei Xing, Ji Li, Xianglin Peng, Lu Qiao, Yuxiang Liu, Xiaolu Xiong, et al. 2022. “Controllable Epitaxy of Quasi-One-Dimensional Topological Insulator α-Bi4Br4 for the Application of Saturable Absorber.” Applied Physics Letters 120 (9): 1–6. doi:10.1063/5.0083807.