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Molecular beam epitaxy of TmTe thin films on SrF2 (111).
- Source :
- AIP Advances; Feb2022, Vol. 12 Issue 2, p1-7, 7p
- Publication Year :
- 2022
-
Abstract
- The odd parity nature of 4f states characterized by strong spin–orbit coupling and electronic correlations has led to a search for novel topological phases among rare earth compounds, such as Kondo systems, heavy Fermions, and homogeneous mixed-valent materials. Our target system is thulium telluride thin films whose bandgap is expected to be tuned as a function of lattice parameter. We systematically investigate the growth conditions of Tm<subscript>x</subscript>Te<subscript>y</subscript> thin films on SrF<subscript>2</subscript> (111) substrates by molecular beam epitaxy. The ratio between Te and Tm supply was precisely tuned, resulting in two different crystalline phases, which were confirmed by x-ray diffraction and x-ray photoemission spectroscopy. By investigating the crystalline quality as a function of the substrate temperature, the optimal growth conditions were identified for the desired Tm<subscript>1</subscript>Te<subscript>1</subscript> phase. Additional low energy electron diffraction and reflective high energy electron diffraction measurements confirm the epitaxial growth of TmTe layers. X-ray reflectivity measurements demonstrate that homogeneous samples with sharp interfaces can be obtained for varied thicknesses. Our results provide a reliable guidance to prepare homogeneous high-quality TmTe thin films and thus serve as a basis for further electronic investigations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 12
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 155684747
- Full Text :
- https://doi.org/10.1063/5.0083276