Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films.

Authors :: Izhnin, I.
Voitsekhovskii, A. V.
Korotaev, A. G.
Mynbaev, K. D.
Swiatek, Z.
Morgiel, J.
Fitsych, O. I.
Varavin, V. S.
Marin, D. V.
Yakushev, M. V.
Bonchyk, O. Yu.
Savytskyy, H. V.
Source :: Applied Nanoscience; Mar2022, Vol. 12 Issue 3, p395-401, 7p
Publication Year :: 2022
Abstract: Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 10<superscript>14</superscript> cm<superscript>–2</superscript> fluence in n and p-type Hg<subscript>0.78</subscript>Cd<subscript>0.22</subscript>Te films grown by molecular-beam epitaxy. A similarity in defect pattern formed by arsenic implantation in n and p-type material was observed. The electrical properties of the implanted layers in n and p-type films also appeared to be similar, confirming the results of microscopic observations. [ABSTRACT FROM AUTHOR]

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