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Influence of In Doping on Physical Properties of Co-precipitation Synthesized CdO NPs and Fabrication of p-Si/n-CdIn2O4 Junction Diodes for Enhanced Photodetection Applications.
- Source :
- Journal of Electronic Materials; Apr2022, Vol. 51 Issue 4, p1759-1777, 19p
- Publication Year :
- 2022
-
Abstract
- We report on the fabrication of p-Si/n-CdO and p-Si/n-CdIn<subscript>2</subscript>O<subscript>4</subscript> junction diodes using chemically prepared pure CdO and In 5–20 wt.%-doped CdO nanoparticles. The cadmium oxide (CdO) and indium-doped cadmium oxide (ICO) nanoparticles were characterized using x-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy, energy dispersive analysis, high-resolution transmission electron microscopy (HRTEM), UV-Vis analysis, photoluminescence (PL) and electrical conductivity measurements. The strongest orientation along the (111) plane for CdO indicates a fcc crystal system. The average particle size of ICO nanoparticles vary from 26 nm to 41 nm. The FTIR bands for ICO samples at 508–511 cm<superscript>−1</superscript> was strongly remodeled while increasing the doping concentration of In at 15 wt.%. HRTEM revealed a clear spherical morphology ~16.28 nm of average particle size for the ICO with 20 wt.% In. Moreover, a maximum electrical conductivity of 15.084 × 10<superscript>−10</superscript> S cm<superscript>−1</superscript> with higher transmittance range of about 76.11% was achieved. The photosensitivity of the p-Si/n-CdIn<subscript>2</subscript>O<subscript>4</subscript> diode varied from 10<superscript>3</superscript> to 10<superscript>4</superscript> %. Also, high quantum efficiency ~225.92% and specific detectivity 5.1952×10<superscript>11</superscript> Jones were found for p-Si/n-CdIn<subscript>2</subscript>O<subscript>4</subscript> photodiode. These outcomes suggest that the developed p-Si/n-CdIn<subscript>2</subscript>O<subscript>4</subscript> diode is suitable one in the fabrication of UV photodetector and solar cell devices for electronic communication. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 51
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 155690045
- Full Text :
- https://doi.org/10.1007/s11664-021-09427-0