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Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga2O3 heterojunction by trapping effect.
- Source :
- SCIENCE CHINA Technological Sciences; Mar2022, Vol. 65 Issue 3, p704-712, 9p
- Publication Year :
- 2022
-
Abstract
- Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure? Certainly, the answer is yes. Herein, we experimentally verify that the photodetection performance modulation effect of oxygen vacancy (V<subscript>o</subscript>) is transmitted from the ε-Ga<subscript>2</subscript>O<subscript>3</subscript> layer to the PEDOT:PSS/ε-Ga<subscript>2</subscript>O<subscript>3</subscript> (PGO) hybrid heterojunction. By adopting the annealed ε-Ga<subscript>2</subscript>O<subscript>3</subscript> films, whose V<subscript>o</subscript> concentrations are remolded by annealing ambients, the constructed PGO photodetectors (PDs) demonstrate regulable self-powered performance. As the V<subscript>o</subscript> defects decrease, the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10<superscript>7</superscript>, an excellent on/off switching ratio of 6.45×10<superscript>5</superscript>, fast rise/decay time of 121/72 ms, a large responsivity of 67.9 mA/W, superior detectivity of 9.2×10<superscript>13</superscript> Jones, an outstanding external quantum efficiency of 33.2%, and a high rejection ratio (R<subscript>250</subscript>/R<subscript>400</subscript>) of 5.96×10<superscript>6</superscript> at 0 V in PGO-O<subscript>2</subscript> PD. The better photoresponse is attributed to the less V<subscript>o</subscript> defect concentration in the ε-Ga<subscript>2</subscript>O<subscript>3</subscript> layer, which could favor the lower electron-trapping probability and a more efficient charge-carrier transfer. Considering the universality of V<subscript>o</subscript> defects in oxide materials, the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16747321
- Volume :
- 65
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- SCIENCE CHINA Technological Sciences
- Publication Type :
- Academic Journal
- Accession number :
- 155720216
- Full Text :
- https://doi.org/10.1007/s11431-021-1945-x