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Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs.
- Source :
- Journal of Semiconductors; Mar2022, Vol. 43 Issue 3, p1-4, 4p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 43
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 155832924
- Full Text :
- https://doi.org/10.1088/1674-4926/43/3/032801