Self-heating and Negative Differential Conductance Improvement by Substrate Bias Voltage in Tri-gate Junctionless Transistor.

Self-heating effects (SHE) in silicon-on-insulator (SOI) based tri-gate junctionless field effect transistor (TG-JLFET) due to low thermal conductivity of buried oxide (SiO₂) is studied in this paper. Self-heating results in degradation of drain current due to reduced mobility and also negative differential conductance (NDC) is seen in saturation region. This paper shows that substrate bias voltage can dynamically reduce self-heating and NDC in TG-JLFETs. The analysis is carried out by three-dimensional TCAD simulation using Sentaurus device simulator. [ABSTRACT FROM AUTHOR]