β -Ga 2 O 3 -Based Power Devices: A Concise Review.

Ga₂O₃ has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga₂O₃-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga₂O₃ may well be promising to lead power electronics. [ABSTRACT FROM AUTHOR]