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650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications.
- Source :
- IEEE Transactions on Industrial Electronics; Sep2022, Vol. 69 Issue 9, p8997-9006, 10p
- Publication Year :
- 2022
-
Abstract
- A 650-V/84-mΩ normally-off GaN/SiC cascode device is demonstrated with systematic static and dynamic characterizations. The cascode device features a low-voltage enhancement-mode (E-mode) gallium nitride (GaN) high electron mobility transistor (HEMT) to enable normally-off gate control, and a 650-V normally-on silicon carbide (SiC) JFET provides the high-voltage blocking capability. The GaN/SiC cascode device exhibits many application-desired behaviors, including reverse conduction capability, avalanche breakdown capability, thermally stable threshold voltage, low input/output capacitances, no dynamic RON degradation, and negligible dynamic VTH shift. In addition, a customized double-pulse test board is built to evaluate the switching performance of this cascode device and other 650-V SiC-based power devices. This cascode device adopting low-voltage GaN HEMT has low QG×RON and exhibits excellent switching performance. The switching losses (EON and EOFF) are much smaller than that of the 650-V Si/SiC cascode device and comparable to that of the state-of-the-art 650-V SiC MOSFETs. [ABSTRACT FROM AUTHOR]
- Subjects :
- MODULATION-doped field-effect transistors
GALLIUM nitride
THRESHOLD voltage
Subjects
Details
- Language :
- English
- ISSN :
- 02780046
- Volume :
- 69
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Industrial Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 156273172
- Full Text :
- https://doi.org/10.1109/TIE.2021.3114697