Amplification of pyroelectric device with WSe2 field effect transistor and ferroelectric gating.

A WSe₂ field effect transistor integrated with a lead zirconium titanate (PZT) pyroelectric device has been designed, fabricated, and tested and is described as the integrated pyroelectric device. The integrated device has been compared to a standalone pyroelectric device, which consists of PZT sandwiched between platinum electrodes. A pyroelectric coefficient of 1.755 × 10⁻⁴ C/m²K has been realized for our thin-film PZT (650 nm). The integrated device amplifies the output of the standalone device by over ten orders of magnitude as the current density calculated for the devices is 16 nA/mm² and 1 nA/mm², respectively. The interplay between the pyro- and ferro-induced polarization of the integrated device has been studied. From our observations, the ferroelectric gating controls directly the drain-source current output of the integrated device, showing anti-clockwise hysteresis behavior. The device shows promise for application in infrared sensing. [ABSTRACT FROM AUTHOR]