Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces.

We report that very low threading dislocation densities (8×10⁷/cm²) were achieved in uniform GaN layers grown by metalorganic chemical vapor deposition on (0001) 4H-SiC mesa surfaces 50 μm×50 μm in area that were completely free of steps. Transmission electron microscopy (TEM) indicated that all observable GaN film threading dislocations were of edge type. TEM analysis of the defect structure of the nucleation layer (aluminum nitride, AlN) revealed a lack of c-component dislocations, and the clean annihilation of lateral, a-type dislocations within the first 200 nm of growth, with no lateral dislocations developing threading arms. These results indicate that the elimination of steps on the initial (0001) 4H-SiC growth surface may play an important role in the removal of mixed and c-type dislocations in subsequently grown AlN and GaN heteroepitaxial layers. [ABSTRACT FROM AUTHOR]