High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric.

Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)‐based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high‐performance and low‐power chemical vapor deposition‐grown polycrystalline molybdenum ditelluride (MoTe2) TFTs with solution‐processed ternary Hf0.5Zr0.5O2/HfAlO2 high‐k dielectric. Benefitting from the optimized high quality HfAlO2 film synthesis and proper postannealing treatment, the constructed MoTe2 TFTs exhibit a high mobility ≈27.24 cm2 V−1 S−1, a current on/off ratio ≈6.43 × 105, threshold voltage ≈−3.27 V, and subthreshold swing (SS) value ≈152.4 mV dec−1, respectively. Moreover, by supplementing another solution‐processed layer of ferroelectric Hf0.5Zr0.5O2 to form double layer of HfAlO2/Hf0.5Zr0.5O2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of ≈55.53 cm2 V−1 S−1, and significantly reduced SS value of ≈110.16 mV dec−1, respectively. The current investigation offers a feasible strategy to fabricate high‐performance and low‐power MoTe2 TFTs for potential TMDs‐based TFTs applications. [ABSTRACT FROM AUTHOR]