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A GaN Driver for a Bi-Directional Buck/Boost Converter With Three-Level V GS Protection and Optimal-Point Tracking Dead-Time Control.
- Source :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers; May2022, Vol. 69 Issue 5, p2212-2224, 13p
- Publication Year :
- 2022
-
Abstract
- This paper presents a gate driver for a GaN-based half-bridge structure operating in a buck converter with input voltage >40 V or a boost converter with output voltage >30 V. Two 500 pF on-chip capacitors are utilized to construct three-level gate drivers, providing a near- $V_{{\text {DD}}}$ negative voltage for gate of the rectifier switch to eliminate the induced pulse on the gate from the high dv / dt slew rate of $V_{\text {X}}$ when the main switch is turned on. The dead time controller tunes the delay of the gate signal of the rectifier switch by sensing the slope of $V_{\text {X}}$ , thus the near-optimal zero-voltage switching can be achieved with deviation < 3 ns. The GaN driver is implemented with a 0.18- $\mu \text{m}$ BCD process. The efficiencies can be improved by 8.33% and 6.87% at light load in a buck and a boost converter due to the dead-time control. The peak efficiencies of 20 V–12 V and 12 V–18 V conversions are 86.37% and 84.39%, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 69
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 156630292
- Full Text :
- https://doi.org/10.1109/TCSI.2022.3146190