Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon.

MLA

Persson, Anton E. O., et al. “Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon.” IEEE Electron Device Letters, vol. 43, no. 6, June 2022, pp. 854–57. EBSCOhost, https://doi.org/10.1109/LED.2022.3171597.

APA

Persson, A. E. O., Zhu, Z., Athle, R., & Wernersson, L.-E. (2022). Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon. IEEE Electron Device Letters, 43(6), 854–857. https://doi.org/10.1109/LED.2022.3171597

Chicago

Persson, Anton E. O., Zhongyunshen Zhu, Robin Athle, and Lars-Erik Wernersson. 2022. “Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon.” IEEE Electron Device Letters 43 (6): 854–57. doi:10.1109/LED.2022.3171597.