Improved optical and electrical switching in Bi2S3 nested nano-networks with broad trap distribution.

The nanostructures usually possess plenty of surface traps owing to their large surface-ratio comparing with the corresponding bulk materials. Hence understanding the carrier transport related to the traps is critical to enhance the performance of the nanostructures. Here, based on the studies to Meyer–Neldel relationship, a phenomenon closely related to the traps and widely observed in various materials, we reveal the broad distribution nature of the trap in the nested nano-networks of Bi₂S₃, and accordingly design the improved strategy to enhance its switching performances based on trapping/detrapping of the charge carriers in Bi₂S₃ nested nano-networks. It achieves improved optical switching time from few hundred seconds to few seconds by using only the shallow traps. While thanks for their deep traps, it could produce multi-level resistive switching with optimal on/off ratio better than 50. [ABSTRACT FROM AUTHOR]