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Preparation of High-Thickness n − -Ga 2 O 3 Film by MOCVD.
- Source :
- Coatings (2079-6412); May2022, Vol. 12 Issue 5, p645-N.PAG, 9p
- Publication Year :
- 2022
-
Abstract
- The homoepitaxial Si-doped Ga<subscript>2</subscript>O<subscript>3</subscript> film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n<superscript>−</superscript>-type properties with a doping concentration of 3.6 × 10<superscript>16</superscript> cm<superscript>−3</superscript> and electron mobility of 137 cm<superscript>2</superscript>/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga<subscript>2</subscript>O<subscript>3</subscript> power devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- CHEMICAL vapor deposition
DOPING agents (Chemistry)
EPITAXY
GALLIUM nitride films
Subjects
Details
- Language :
- English
- ISSN :
- 20796412
- Volume :
- 12
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Coatings (2079-6412)
- Publication Type :
- Academic Journal
- Accession number :
- 157146910
- Full Text :
- https://doi.org/10.3390/coatings12050645