Cite
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate.
MLA
Wang, Hsiang-Chun, et al. “Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off P-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate.” Micromachines, vol. 13, no. 5, May 2022, p. 807. EBSCOhost, https://doi.org/10.3390/mi13050807.
APA
Wang, H.-C., Liu, C.-H., Huang, C.-R., Chiu, H.-C., Kao, H.-L., & Liu, X. (2022). Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. Micromachines, 13(5), 807. https://doi.org/10.3390/mi13050807
Chicago
Wang, Hsiang-Chun, Chia-Hao Liu, Chong-Rong Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, and Xinke Liu. 2022. “Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off P-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate.” Micromachines 13 (5): 807. doi:10.3390/mi13050807.