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Resistive Switching in Polyvinylpyrrolidone/Molybdenum Disulfide Composite-Based Memory Devices.
- Source :
- Acta Physica Polonica: A; May2022, Vol. 141 Issue 5, p439-444, 6p
- Publication Year :
- 2022
-
Abstract
- Four types of resistive random access memory structures with an active layer comprising: (1) MoS<subscript>2</subscript> (device A), (2) PVP (device B), (3) PVP and MoS<subscript>2</subscript> bilayer (device C), and (4) PVP + MoS<subscript>2</subscript> nanocomposites with 10 (device D), 20 (device E), 30 (device F) and 40 wt% (device G) MoS<subscript>2</subscript>, have been fabricated with Al and Ag as bottom and top electrodes, respectively. A study of resistive switching and electrical conduction mechanisms of these resistive random access memory modules revealed that devices A and B did not exhibit switching characteristics. Device C showed a combination of bipolar and threshold switching with a low switching voltage of 0:40 V. Device G portrayed bipolar switching at 0:56 V. In device C, space charge-limited conduction with a transition voltage V<subscript>tr</subscript> = 0:24 V was observed, whereas in device G, Ohmic behaviour between 0.0 and 0.22 V, followed by trapping of charge in the 0.22-0.56 V regime before switching, was noticed. Both devices C and G showed a reasonable (≥ 10²) ON/OFF ratio. In nanocomposite devices, an increase in MoS<subscript>2</subscript> content resulted in an increase in electrical conductivity in the Ohmic region, leading to threshold switching at 30 wt% (device F) and ultimately bipolar switching at 40 wt% (device G). These studies have shown that both switching and conduction mechanisms are sensitive to the type and composition of the active layer in the devices studied. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 05874246
- Volume :
- 141
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Acta Physica Polonica: A
- Publication Type :
- Academic Journal
- Accession number :
- 157675431
- Full Text :
- https://doi.org/10.12693/APhysPolA.141.439