P‐21: Student Poster: Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors for High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays.

Realization of a near‐eye, liquid‐crystal (LC) display with resolution density > 2000 pixels per inch (PPI) is desired but places great demands on the choices of the LC and the thin‐film transistor (TFT) backplane technology. Presently investigated is the requirement placed on the allowable leakage current in the off‐state of a scan transistor in an active‐matrix LC display. With the resolution boosted by the elimination of the storage capacitor, an even more stringent limit is placed on the leakage current. It is concluded that a backplane technology based on metal‐oxide TFTs offering inherently low leakage current enables the construction of a higher‐resolution display. As a demonstration, a 500 PPI display based on deformed‐helix ferroelectric LC and indium‐gallium‐zinc oxide TFTs has been fabricated and characterized. [ABSTRACT FROM AUTHOR]