Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film.

In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an intensive study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. The results show that the pop-in event occurring in the theoretical elastic region of single-crystal silicon is caused by the stress concentration at the interface between the oxide film and the substrate. This causes the single-crystal silicon to be converted from the elastic deformation zone to the plastic deformation zone. And at this time, the elastic domain area is almost negligible, which seriously affects the machinability of single-crystal silicon for ultra-precision processing. In addition, the experimental data of single-crystal silicon under ultra-low load deviates greatly relative to the real value and fluctuates widely. However, when the nanoindentation experiment enters the fully plastic deformation zone of single-crystal silicon, the test results of its mechanical properties will be more accurate. [ABSTRACT FROM AUTHOR]