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Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells.

Authors :
Wöpke, Christopher
Göhler, Clemens
Saladina, Maria
Du, Xiaoyan
Nian, Li
Greve, Christopher
Zhu, Chenhui
Yallum, Kaila M.
Hofstetter, Yvonne J.
Becker-Koch, David
Li, Ning
Heumüller, Thomas
Milekhin, Ilya
Zahn, Dietrich R. T.
Brabec, Christoph J.
Banerji, Natalie
Vaynzof, Yana
Herzig, Eva M.
MacKenzie, Roderick C. I.
Deibel, Carsten
Source :
Nature Communications; 7/15/2022, Vol. 13 Issue 1, p1-8, 8p
Publication Year :
2022

Abstract

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC. Long operational stability is essential to commercialisation of organic solar cells. Here, the authors investigate the thermal degradation of inverted photovoltaic devices based on PM6:Y6 non-fullerene system to reveal that trap-induced transport resistance is primarily responsible for the drop in fill factor. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
13
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
158020405
Full Text :
https://doi.org/10.1038/s41467-022-31326-z