Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μm CMOS Technology.

MLA

Maes, D., et al. “Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 Μm CMOS Technology.” Integrated Ferroelectrics, vol. 66, no. 1, Sept. 2004, pp. 71–83. EBSCOhost, https://doi.org/10.1080/10584580490894753.

APA

Maes, D., Everaert, J.-L., Goux, L., Lisoni, J. G., Paraschiv, V., Schwitters, M., Haspeslagh, L., Wouters, D. J., Artoni, C., Caputa, C., Casella, P., Corallo, G., Russo, G., Zambrano, R., Monchoix, H., & van Autryve, L. (2004). Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μm CMOS Technology. Integrated Ferroelectrics, 66(1), 71–83. https://doi.org/10.1080/10584580490894753

Chicago

Maes, D., J. -L. Everaert, L. Goux, J. G. Lisoni, V. Paraschiv, M. Schwitters, L. Haspeslagh, et al. 2004. “Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 Μm CMOS Technology.” Integrated Ferroelectrics 66 (1): 71–83. doi:10.1080/10584580490894753.