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Structure and bandgap determination of InN grown by RP-MOCVD.

Authors :: Dubreuil, R.
Amin, M. R.
Tot, J.
Nagorski, M.
Kadikoff, B.
Moewes, A.
Alexandrov, D.
Source :: Journal of Materials Science: Materials in Electronics; Aug2022, Vol. 33 Issue 22, p17668-17677, 10p
Publication Year :: 2022
Abstract: InN thin films are grown on sapphire substrates by remote plasma-assisted metal organic chemical vapor deposition while varying the indium pulse length and substrate temperature. The effects of the indium pulse length and temperature on the structural, morphological, electronic, and optical properties of the thin films are studied. The structural parameters are determined by X-ray diffraction and X-ray photoelectron spectroscopy and the effects of incorporating oxygen atoms in the structure is described. The N K-edge X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) measurements are used to determine the band gap and it is found to be 1.80 ± 0.25 eV for all samples. A complementary measurement namely, X-ray excited optical luminescence measurement is performed to confirm the band gap value obtained from XAS and XES measurements. O K-edge XAS measurements are performed to determine the presence of oxygen impurities in the samples. Meanwhile, we carry out the density functional theory calculations for Wurtzite InN, hypothetical Wurtzite-type InO<subscript>0.5</subscript>N<subscript>0.5</subscript>, and InO<subscript>0.0625</subscript>N<subscript>0.9375</subscript> structures. We find that the measured N-edge spectra agree well with our Wurtzite InN calculations and the measured O K-edge spectra agree better with hypothetical Wurtzite-type InO<subscript>0.0625</subscript>N<subscript>0.9375</subscript> than Wurtzite-type InO<subscript>0.5</subscript>N<subscript>0.5</subscript>. [ABSTRACT FROM AUTHOR]