A 4-Mb Toggle MRAM Based on a Novel Bit and Switching Method.

Abstract-A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-μm complementary metal-oxide-semiconductor process with a bit cell size of 1.55 μm². The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. Adetailed description of this 4-Mb toggle MRAM is presented. [ABSTRACT FROM AUTHOR]