Cite
Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.
MLA
Wang, Rui, et al. “Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.” Micromachines, vol. 13, no. 7, July 2022, p. N.PAG. EBSCOhost, https://doi.org/10.3390/mi13071096.
APA
Wang, R., Guo, H., Hou, Q., Lei, J., Wang, J., Xue, J., Liu, B., Chen, D., Lu, H., Zhang, R., & Zheng, Y. (2022). Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines, 13(7), N.PAG. https://doi.org/10.3390/mi13071096
Chicago
Wang, Rui, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, et al. 2022. “Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.” Micromachines 13 (7): N.PAG. doi:10.3390/mi13071096.