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Manipulated magnetic coercivity and spin reorientation transition in NiCo2O4 films.

Authors :
Wang, Wenli
Du, Qin
Wang, Bo
Li, Yaojin
Hu, Zhongqiang
Wang, Yu
Wang, Zhiguang
Liu, Ming
Source :
Journal of Applied Physics; 8/21/2022, Vol. 132 Issue 7, p1-8, 8p
Publication Year :
2022

Abstract

Half-metallic NiCo<subscript>2</subscript>O<subscript>4</subscript> with high spin polarizability has great potential applications in spintronics. The manipulation of magnetic anisotropy is crucial for spintronics based on spin-transfer or spin–orbit torques, as it is directly related to the critical switching current density. Here, we report epitaxial growth of metallic NiCo<subscript>2</subscript>O<subscript>4</subscript> film with perpendicular magnetic anisotropy on MgAl<subscript>2</subscript>O<subscript>4</subscript> single crystal substrates. The modulation of the magnetic anisotropy was achieved by changing the growth conditions (deposition temperature and thickness) of NiCo<subscript>2</subscript>O<subscript>4</subscript> films and by means of protonation. Strong dependence of magnetic coercivity on deposition temperature (350–500 °C) has been observed due to variable phase configuration. Furthermore, the magnetic coercive field can also be effectively controlled by the film thickness (3–78 nm) through strain relaxation. More importantly, spin reorientation transition has been achieved by proton and electron doping in the NiCo<subscript>2</subscript>O<subscript>4</subscript> films, resulting in reconfigured valence states of Ni and Co cations and a magnetic easy axis rotation from out-of-plane to in-plane. The effective modulation of the magnetic anisotropy provides important insights into the functional design of NiCo<subscript>2</subscript>O<subscript>4</subscript>-based spintronics with ultralow energy dissipation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
132
Issue :
7
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
158627804
Full Text :
https://doi.org/10.1063/5.0091863