Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors.

A high-performance indium oxide (In₂O₃)-based thin-film transistor (TFT) was prepared with aluminum oxide/fluorinated self-assembled monolayer (Al₂O₃/F-SAM) double-gate dielectric layer. The Al₂O₃/F-SAM double gate dielectric layer improved the performance of the In₂O₃-based TFT by reducing the device leakage current. In addition, devices with a double-gate dielectric layer show improved stability under negative bias stress testing compared to devices with a single gate dielectric layer (Al₂O₃), shifting a threshold voltage by only 0.4 V. These results suggest that the Al₂O₃/F-SAM double-layer gate dielectric layer can enhance the performance of In₂O₃-based TFTs. Furthermore, it can be used to improve the performance of other metal oxide-based devices by minimizing the leakage current at low operating voltages at low cost. [ABSTRACT FROM AUTHOR]