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Atomic Layer Deposited SiO X -Based Resistive Switching Memory for Multi-Level Cell Storage.
- Source :
- Metals (2075-4701); Aug2022, Vol. 12 Issue 8, p1370-1370, 6p
- Publication Year :
- 2022
-
Abstract
- Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiO<subscript>X</subscript>-based resistive memory device. The thickness and chemical properties of the Pt/SiO<subscript>X</subscript>/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20754701
- Volume :
- 12
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Metals (2075-4701)
- Publication Type :
- Academic Journal
- Accession number :
- 158913951
- Full Text :
- https://doi.org/10.3390/met12081370