Atomic Layer Deposited SiO X -Based Resistive Switching Memory for Multi-Level Cell Storage.

Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiO_X-based resistive memory device. The thickness and chemical properties of the Pt/SiO_X/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively. [ABSTRACT FROM AUTHOR]