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Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape.
- Source :
- Nature Communications; 9/9/2022, Vol. 13 Issue 1, p1-11, 11p
- Publication Year :
- 2022
-
Abstract
- Cuprous oxide (Cu<subscript>2</subscript>O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu<subscript>2</subscript>O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.10<superscript>14</superscript>−2.10<superscript>18</superscript> cm<superscript>−3</superscript>), mobility (1–86 cm<superscript>2</superscript>/V.s), and optical bandgap (2.2–2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (positron annihilation spectroscopy (PAS), Raman spectroscopy and photoluminescence). Our results reveal the existence of large complex defects and the decrease of the overall defect concentration in the films with increasing oxygen fraction used during deposition. Cu<subscript>2</subscript>O offers a lot of potential for several optoelectronic applications. Here, the authors present a low temperature, fast and scalable approach to deposit Cu<subscript>2</subscript>O films with low resistivity, which is correlated to the defect landscape in the material. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 13
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- 159000141
- Full Text :
- https://doi.org/10.1038/s41467-022-32943-4