Mobility enhancement in heavily doped 4H-SiC (0001), (112Ě„0), and (11Ě„00) MOSFETs via an oxidation-minimizing process.

The effects of a process that minimizes oxidation of SiC on the channel mobility of heavily doped 4H-SiC (0001), (112Ě„0) and (11Ě„00) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. High field-effect mobilities were obtained for these MOSFETs even when the acceptor concentration of the p-body (N _A) exceeded 1 Ă— 10¹⁸ cm^âˆ'3. The field-effect mobility for the (0001) MOSFETs reached 25 cm² V^âˆ'1 s^âˆ'1 (N _A = 1 Ă— 10¹⁸ cm^âˆ'3). The fabricated (11 2 ÂŻ 0) and (1 1 ÂŻ 00) MOSFETs showed very high channel mobilities of 125 cm² V^âˆ'1 s^âˆ'1 (N _A = 1 Ă— 10¹⁸ cm^âˆ'3) and 80 cm² V^âˆ'1 s^âˆ'1 (N _A = 5 Ă— 10¹⁸ cm^âˆ'3), respectively. [ABSTRACT FROM AUTHOR]