A review of nanoindentation and related cathodoluminescence studies on semiconductor materials.

Nanoindentation studies on bulk and epitaxial semiconductor crystals have been reviewed in general. The common materials of technological interest such as Si, Ge, GaAs, GaN, InP, CdZnTe, HgCdTe etc. have been included. Issues related with the measurement and analysis of load–displacement characteristics have been discussed in detail, including those for cyclic nanoindentation and continuous stiffness measurements. Common mistakes/oversights in the extraction of mechanical properties, particularly for the elastic modulus, have been highlighted. Various features observed in load–displacement curves are discussed in connection with different semiconductor materials. These include pop-in/pop-out events and serrations observed in general, and the open-jaw and hysteresis like features in cyclic nanoindentation. Cathodoluminescence studies on indented surfaces have also been included to highlight the deformation behaviour of some of the crystalline semiconductor materials. [ABSTRACT FROM AUTHOR]