Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure.

Details

Language :

English

ISSN :

20958226

Volume :

65

Issue :

10

Database :

Complementary Index

Journal :

Science China Materials

Publication Type :

Academic Journal

Accession number :

159239888

Full Text :

https://doi.org/10.1007/s40843-022-2028-7