Growth of an InP/GaInAsP Heterostructure on a Shaped InP Substrate for Laser Diode-Based CO2 Sensing.

This paper presents a technological study aimed at growing buried-channel heterostructures for single-mode semiconductor lasers operating in the spectral range 1600–1610 nm. We have produced laser diodes with an emission wavelength corresponding to an overtone in the absorption band of carbon dioxide and assessed the effect of temperature on their optical emission spectra. It has been shown that their emission spectra can be tuned over the range from 1559 to 1620 nm. We have demonstrated the feasibility of producing intelligent fiber-optic systems for remote carbon dioxide concentration monitoring. [ABSTRACT FROM AUTHOR]