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Design and investigation of stability‐ and power‐improved 11T SRAM cell for low‐power devices.
- Source :
- International Journal of Circuit Theory & Applications; Nov2022, Vol. 50 Issue 11, p3827-3845, 19p
- Publication Year :
- 2022
-
Abstract
- The modern system‐on‐chips require stable and low‐power SRAM cells due to technology scaling and limited sources of energy. Therefore, a stability‐ and power‐improved 11T SRAM cell is proposed in this study. The proposed cell core is composed of a strong cross‐coupled structure of a conventional inverter with a N‐type stacked transistor and a Schmitt‐trigger (ST) with a double channel‐length pull‐up network. This coupled with a separate read path enhances the read static noise margin (RSNM). Moreover, a feedback‐cutting N‐type transistor is placed inside the cell core to improve the write static noise margin (WSNM)/write margin (WM). Though the presence of stacked transistors in access paths increases read delay (TRA)/write delay (TWA), it reduces leakage. This metric further minimizes with the aid of a stacked structure of latch core and double channel‐length of pull‐up transistor in the ST inverter. The moderate read/write frequency and single‐ended structure of the suggested cell result in low dynamic power. Simulated results by using 16‐nm CMOS at VDD = 0.7 V show that the proposed cell has the second‐best RSNM/WSNM, which is 4.65/1.44 times higher than that of the fully differential 8T (FD8T) cell, as the basic cell. Moreover, it reduces leakage power by at least 2.01 times and consumes moderate read/write power, nearly 1.44/1.81 times lower than that of FD8T cell, at the cost of 1.61 times area overhead. The proposed cell can eliminate read/write‐half‐select‐disturbance issues to support bit‐interleaving architecture to increase soft error immunity. [ABSTRACT FROM AUTHOR]
- Subjects :
- STATIC random access memory
SOFT errors
TRANSISTORS
CELL anatomy
Subjects
Details
- Language :
- English
- ISSN :
- 00989886
- Volume :
- 50
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- International Journal of Circuit Theory & Applications
- Publication Type :
- Academic Journal
- Accession number :
- 160029684
- Full Text :
- https://doi.org/10.1002/cta.3364