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A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process.

A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process.

Authors :
Hu, Aizhen
Leng, Yongqing
Qiu, Xin
Luan, Tongyao
Peng, Yatao
Source :
Applied Sciences (2076-3417); Nov2022, Vol. 12 Issue 21, p10872, 11p
Publication Year :
2022

Abstract

With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power ( P o u t ), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) P o u t of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20763417
Volume :
12
Issue :
21
Database :
Complementary Index
Journal :
Applied Sciences (2076-3417)
Publication Type :
Academic Journal
Accession number :
160142808
Full Text :
https://doi.org/10.3390/app122110872