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A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design.

Authors :
Yan, Aibin
Wei, Shaojie
Chen, Yu
Fan, Zhengzheng
Huang, Zhengfeng
Cui, Jie
Girard, Patrick
Wen, Xiaoqing
Source :
Micromachines; Nov2022, Vol. 13 Issue 11, p1802, 11p
Publication Year :
2022

Abstract

In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be hit by a radiative particle in the aerospace environment, which can cause a severe soft error in the worst case. This paper presents a NV-latch based on resistive random-access memories (ReRAMs) for NV and robust applications. The proposed NV-latch is radiation-hardened with low overhead and can restore values after power down operation. Simulation results demonstrate that the proposed NV-latch can completely provide radiation hardening capability against single-event upsets (SEUs) and can restore values after power down operation. The proposed NV-latch can reduce the number of transistors in the storage cells by 50% on average compared with the other similar solutions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2072666X
Volume :
13
Issue :
11
Database :
Complementary Index
Journal :
Micromachines
Publication Type :
Academic Journal
Accession number :
160206010
Full Text :
https://doi.org/10.3390/mi13111802