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Thermoelectric performance enhancement in p-type Si via dilute Ge alloying and B doping.
- Source :
- Journal of Materials Science; Nov2022, Vol. 57 Issue 43, p20299-20308, 10p, 1 Color Photograph, 5 Graphs
- Publication Year :
- 2022
-
Abstract
- Majority of the modern electronics are made up of Si owing to a confluence of beneficial properties such as Earth-abundance, non-toxicity, light-weightedness, and versatile dopability. Yet, the thermoelectric performance of Si is not widely explored, due to the relatively high thermal conductivity of undoped Si. In this work, we devised a strategy combining light Ge alloying and B doping to simultaneously enhance the electronic properties and drastically reduce the thermal conductivity of Si. The phonon scattering brought about by Ge atoms, and optimal carrier concentration brought about by B dopant optimizes the thermal and electronic properties. Consequently, zT of 0.14 was achieved at 873 K for Si<subscript>0.97</subscript>Ge<subscript>0.01</subscript>B<subscript>0.02</subscript>, corresponding to 230% enhancement compared to pristine Si. The strategy reported in this work can be extended to the design of high thermoelectric performance in other Si-based compounds. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 57
- Issue :
- 43
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 160295420
- Full Text :
- https://doi.org/10.1007/s10853-022-07925-y