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High thickness uniformity of 2-in. wafer-scale β-Ga2O3 films grown by MOCVD and photoelectrical properties.
- Source :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Dec2022, Vol. 40 Issue 6, p1-7, 7p
- Publication Year :
- 2022
-
Abstract
- In this study, 2-in. wafer-scale large-area β-Ga<subscript>2</subscript>O<subscript>3</subscript> epitaxial films were fabricated on c-plane sapphire substrates via metal-organic chemical vapor deposition. X-ray diffraction, atomic force microscopy, field-emission scanning electron microscope, and photoelectric properties were carried out to disclose the material uniformity of large-scale β-Ga<subscript>2</subscript>O<subscript>3</subscript> epitaxial films. Even with film thickness as thick as 1.5 μm, the grown β-Ga<subscript>2</subscript>O<subscript>3</subscript> epitaxial films demonstrated high crystal quality with an average FWHM of 1.71° and a standard deviation (SD) of 0.035, smooth surface morphology with an average root-mean-square of 5.45 nm and a slight deviation of 0.09 nm, outstanding thickness uniformity with an average film thickness of 1.55 μm and SD value of only 28 nm. Furthermore, each β-Ga<subscript>2</subscript>O<subscript>3</subscript> photodetector on epitaxial wafer expressed uniform stability of the photoelectric performance distribution. High material uniformity of our fabricated large-scale β-Ga<subscript>2</subscript>O<subscript>3</subscript> epitaxial films lays a solid foundation for its future mass production of Ga<subscript>2</subscript>O<subscript>3</subscript>-based devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07342101
- Volume :
- 40
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
- Publication Type :
- Academic Journal
- Accession number :
- 160370649
- Full Text :
- https://doi.org/10.1116/6.0002069