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Optimized carrier concentration and enhanced thermoelectric properties in GeSb4-xBixTe7 materials.
- Source :
- Applied Physics Letters; 11/21/2022, Vol. 121 Issue 21, p1-5, 5p
- Publication Year :
- 2022
-
Abstract
- As the pseudo-binary alloys between GeTe and Sb<subscript>2</subscript>Te<subscript>3</subscript>, GeSbTe-based compounds are promising thermoelectric materials. Although Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> and GeSb<subscript>2</subscript>Te<subscript>4</subscript> have widely been studied, the thermoelectric properties of GeSb<subscript>4</subscript>Te<subscript>7</subscript> have not been well understood yet. In this work, we design a series of GeSb<subscript>4-</subscript><subscript>x</subscript>Bi<subscript>x</subscript>Te<subscript>7</subscript> solid solutions and systematically study the variation in the crystal structure, electrical, and thermal transport properties. Alloying Bi effectively reduces the carrier concentration and, thus, enhances the Seebeck coefficient. Meanwhile, the thermal conductivity is greatly reduced via large mass fluctuations. A maximum zT of 0.69 at 550 K and an average zT value of 0.52 between 300 and 700 K have been achieved for GeSb<subscript>1.5</subscript>Bi<subscript>2.5</subscript>Te<subscript>7</subscript>. These findings will promote the understanding and development of GeSbTe-based thermoelectric materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 21
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 160370717
- Full Text :
- https://doi.org/10.1063/5.0123298