Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability.

Highlights: Through materials analysis and theoretical calculations, the defects of CsSnI₃ nanowires (NWs) were effectively passivated via incorporating 1-butyl-2,3-dimethylimidazolium chloride into perovskites. The high-performance CsSnI₃ NW photodetectors (PDs) were achieved with a responsivity of up to 0.237 A W⁻¹, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. These values are comparable to the reported high-performance Pb-based perovskite PDs and higher than those of the Pb-free perovskite PDs. Our unpackaged devices exhibit ultra-high stability with no degradation after 60 days of storage in air (25 °C, 50% humidity). In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆⁻ octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^–11 A, a responsivity of up to 0.237 A W⁻¹, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%. [ABSTRACT FROM AUTHOR]