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Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability.
- Source :
- Nano-Micro Letters; 11/7/2022, Vol. 14 Issue 1, p1-10, 10p
- Publication Year :
- 2022
-
Abstract
- Highlights: Through materials analysis and theoretical calculations, the defects of CsSnI<subscript>3</subscript> nanowires (NWs) were effectively passivated via incorporating 1-butyl-2,3-dimethylimidazolium chloride into perovskites. The high-performance CsSnI<subscript>3</subscript> NW photodetectors (PDs) were achieved with a responsivity of up to 0.237 A W<superscript>−1</superscript>, a high detectivity of 1.18 × 10<superscript>12</superscript> Jones and a linear dynamic range of 180 dB. These values are comparable to the reported high-performance Pb-based perovskite PDs and higher than those of the Pb-free perovskite PDs. Our unpackaged devices exhibit ultra-high stability with no degradation after 60 days of storage in air (25 °C, 50% humidity). In recent years, Pb-free CsSnI<subscript>3</subscript> perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI<subscript>3</subscript>, such as high density of tin vacancies, structural deformation of SnI<subscript>6</subscript><superscript>−</superscript> octahedra and oxidation of Sn<superscript>2+</superscript> states, are the major challenge to achieve high-performance CsSnI<subscript>3</subscript>-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI<subscript>3</subscript> nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM<superscript>+</superscript> ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI<subscript>3</subscript> NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI<subscript>3</subscript> NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10<superscript>–11</superscript> A, a responsivity of up to 0.237 A W<superscript>−1</superscript>, a high detectivity of 1.18 × 10<superscript>12</superscript> Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 23116706
- Volume :
- 14
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nano-Micro Letters
- Publication Type :
- Academic Journal
- Accession number :
- 160539548
- Full Text :
- https://doi.org/10.1007/s40820-022-00964-9