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Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment.

Authors :
Liu, Siyu
Zhu, Jiejie
Guo, Jingshu
Cheng, Kai
Mi, Minhan
Qin, Lingjie
Liu, Jielong
Jia, Fuchun
Lu, Hao
Ma, Xiaohua
Hao, Yue
Source :
IEEE Electron Device Letters; Oct2022, Vol. 43 Issue 10, p1621-1624, 4p
Publication Year :
2022

Abstract

Low-damage plasma oxidation treatment for AlN/GaN high-electron-mobility transistors (HEMTs) was developed in this letter, with which high-performance enhancement-mode (E-mode) AlON/AlN/GaN HEMTs were demonstrated. After removal of in situ SiN cap layer within gate area, remote plasma oxidation (RPO) treatment of 4.9nm AlN barrier layer at 300 °C leads to formation of AlON insulator layer and effective depletion of 2-D electron gas channel, without etch-induced damage or serious interfacial issues compared with the commonly used gate- recess metal-insulator-semiconductor HEMTs. Thanks to the low-damage RPO treatment, the achieved E-mode HEMTs with threshold voltage of 0.4 V exhibit quite a small loss of output current (7.8%) compared with the depletion-mode devices. In addition, the AlON gate insulator layer results in a remarkable increase in breakdown voltage of devices from 20 V to 74 V, which benefits the high-voltage operation of AlN/GaN technology. Further investigation shows that the oxidation process of AlN barrier tends to be saturated with treatment time increasing, providing a promising solution to the high-performance E-mode operation of scaled GaN-based HEMTs in RF applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
43
Issue :
10
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
160687606
Full Text :
https://doi.org/10.1109/LED.2022.3203164