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Modeling and Mitigating the Interconnect Resistance Issue in Analog RRAM Matrix Computing Circuits.

Authors :
Luo, Yubiao
Wang, Shiqing
Zuo, Pushen
Sun, Zhong
Huang, Ru
Source :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Nov2022, Vol. 69 Issue 11, p4367-4380, 14p
Publication Year :
2022

Abstract

Analog matrix computing (AMC) with resistive memory implies naturally massive parallelism and in-memory processing, thus representing a promising solution for accelerating data-intensive workloads in many applications. In AMC circuits, the interconnect resistances residing in the crosspoint resistive arrays arise as a main non-ideal factor degrading the computing accuracy. Simulating and optimizing the circuits are of fundamental importance for large system integration. In this work, we develop a physics-based iterative algorithm to quickly model the matrix-vector multiplication (MVM) operation of crosspoint resistive array with interconnect resistances, thus quadratically reducing the time complexity of circuit simulation. In addition, we propose a new MVM circuit for matrix with negative values, in parallel with the conventional column-wise splitting (CS) and row-wise splitting (RS) circuits. The circuit is based on the conductance compensation (CC) strategy to realize a simplified RS scheme. The discrete Fourier transform (DFT) is implemented using this circuit as a case study. Simulation results reveal that the computing error caused by interconnect resistances is remarkably reduced in the CC-RS circuit. Also, the CC-RS scheme is demonstrated to be more immune to device variations and source/sink resistances. Our results provide an efficient modeling method together with an optimized approach for AMC circuits with non-idealities. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15498328
Volume :
69
Issue :
11
Database :
Complementary Index
Journal :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers
Publication Type :
Periodical
Accession number :
160688689
Full Text :
https://doi.org/10.1109/TCSI.2022.3199453