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The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition.
- Source :
- Coatings (2079-6412); Jan2023, Vol. 13 Issue 1, p104, 11p
- Publication Year :
- 2023
-
Abstract
- In this study, the effect of deposition temperature of TiN thin films deposited using the thermal atomic layer deposition (ALD) method was investigated. TiCl<subscript>4</subscript> precursor and NH<subscript>3</subscript> reactive gas were used, and the deposition rate, resistivity change, and surface morphology characteristics were compared in the deposition temperature range of 400 °C–600 °C. While resistivity decreased to 177 µΩcm as the deposition temperature increased to 600 °C, an increase in surface roughness (Rq) to 0.69 nm and a deterioration in the step coverage were identified. In order to obtain a high-quality TiN thin film with excellent resistivity and step coverage characteristics even at low deposition temperatures, the TiN thin film was post-treated with plasma in a combination of N<subscript>2</subscript>/He gas ratio of 3:2 to confirm the change in resistivity. X-ray diffraction analysis confirmed crystallization change in the TiN thin film caused by plasma energy. As a result, the resistivity of the TiN thin film deposited at 400 °C was confirmed to be lowered by about 25%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20796412
- Volume :
- 13
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Coatings (2079-6412)
- Publication Type :
- Academic Journal
- Accession number :
- 161436233
- Full Text :
- https://doi.org/10.3390/coatings13010104