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Design of LDO circuit based on curvature compensation reference closed-loop stability.
- Source :
- AIP Advances; Jan2023, Vol. 13 Issue 1, p1-8, 8p
- Publication Year :
- 2023
-
Abstract
- In this paper, a low dropout (LDO) circuit based on a curvature compensation benchmark and closed-loop stability is designed. This circuit compensates for the higher order term of V<subscript>BE</subscript> in a BJT through the subthreshold characteristic of MOSFET and achieves the effect of curvature compensation. The bandgap reference circuit provides a stable input voltage for the LDO circuit, while the source follower and adaptive bias circuit improve the response speed and closed-loop stability of the LDO circuit. The temperature drift coefficient of the bandgap circuit is 8.11 ppm/°C, the input voltage is 3–5 V, the output voltage is 2.8 V, and the linear adjustment rate is 0.22%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 13
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 161626784
- Full Text :
- https://doi.org/10.1063/5.0134622